物料参数
| Number of channels: | 2 |
| Isolation rating: | Reinforced |
| Withstand isolation voltage (VISO) (Vrms): | 5700 |
| Working isolation voltage (VIOWM) (Vrms): | 2121 |
| Transient isolation voltage (VIOTM) (VPK): | 8000 |
| Power switch: | GaNFET, IGBT, MOSFET, SiCFET |
| Peak output current (A): | 6 |
| Features: | Disable, Enable, Programmable dead time |
| Output VCC/VDD (max) (V): | 25 |
| Output VCC/VDD (min) (V): | 6.5, 9.2 |
| Input supply voltage (min) (V): | 3 |
| Input supply voltage (max) (V): | 18 |
| Propagation delay time (µs): | 0.019 |
| Input threshold: | CMOS, TTL |
| Operating temperature range (°C): | -40 to 125 |
| Rating: | Catalog |
| Bootstrap supply voltage (max) (V): | 2121 |
| Rise time (ns): | 6 |
| Fall time (ns): | 7 |
| Undervoltage lockout (typ) (V): | 5, 8 |
| Number of channels: | 2 |
| Isolation rating: | Reinforced |
| Withstand isolation voltage (VISO) (Vrms): | 5700 |
| Working isolation voltage (VIOWM) (Vrms): | 2121 |
| Transient isolation voltage (VIOTM) (VPK): | 8000 |
| Power switch: | GaNFET, IGBT, MOSFET, SiCFET |
| Peak output current (A): | 6 |
| Features: | Disable, Enable, Programmable dead time |
| Output VCC/VDD (max) (V): | 25 |
| Output VCC/VDD (min) (V): | 6.5, 9.2 |
| Input supply voltage (min) (V): | 3 |
| Input supply voltage (max) (V): | 18 |
| Propagation delay time (µs): | 0.019 |
| Input threshold: | CMOS, TTL |
| Operating temperature range (°C): | -40 to 125 |
| Rating: | Catalog |
| Bootstrap supply voltage (max) (V): | 2121 |
| Rise time (ns): | 6 |
| Fall time (ns): | 7 |
| Undervoltage lockout (typ) (V): | 5, 8 |
无库存